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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / FQB27P06TM

FQB27P06TM - SMD P channel transistors

FQB27P06TM
Description

Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -60V
Drain current -19.1A
Power dissipation 120W
Case D2PAK
Gate-source voltage ±25V
On-state resistance 70mΩ
Mounting SMD
Gate charge 43nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat