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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / FQB22P10TM

FQB22P10TM - SMD P channel transistors

FQB22P10TM
Description

Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -100V
Drain current -15.6A
Power dissipation 125W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 0.125Ω
Mounting SMD
Gate charge 50nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat