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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FQB19N20LTM

FQB19N20LTM - SMD N channel transistors

FQB19N20LTM
Description

Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 200V
Drain current 13.3A
Pulsed drain current 84A
Power dissipation 140W
Case D2PAK
Gate-source voltage ±20V
On-state resistance 0.15Ω
Mounting SMD
Gate charge 35nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat