FQB12P20TM - SMD P channel transistors

FQB12P20TM
Description

Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -200V
Drain current -7.27A
Power dissipation 120W
Case D2PAK
Gate-source voltage ±30V
On-state resistance 470mΩ
Mounting SMD
Gate charge 40nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat