FQA8N100C - THT N channel transistors

FQA8N100C
Description

Transistor: N-MOSFET; unipolar; 1000V; 5A; 225W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 1kV
Drain current 5A
Power dissipation 225W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 1.45Ω
Mounting THT
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat