FQA70N10 - THT N channel transistors

FQA70N10
Description

Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 100V
Drain current 49.5A
Power dissipation 214W
Case TO3PN
Gate-source voltage ±25V
On-state resistance 23mΩ
Mounting THT
Gate charge 11nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat