FQA40N25 - THT N channel transistors

FQA40N25
Description

Transistor: N-MOSFET; unipolar; 250V; 25A; Idm: 160A; 280W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 25A
Pulsed drain current 160A
Power dissipation 280W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 70mΩ
Mounting THT
Gate charge 110nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat