FQA36P15 - THT P channel transistors

FQA36P15
Description

Transistor: P-MOSFET; unipolar; -150V; -25.5A; 294W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage -150V
Drain current -25.5A
Power dissipation 294W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 90mΩ
Mounting THT
Gate charge 105nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat