FQA24N60 - THT N channel transistors

FQA24N60
Description

Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology QFET®
Polarisation unipolar
Drain-source voltage 600V
Drain current 14.9A
Power dissipation 310W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 0.24Ω
Mounting THT
Gate charge 145nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat