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Transistor: N-MOSFET; unipolar; 600V; 14.9A; 310W; TO3PN
| Manufacturer |
ONSEMI |
| Type of transistor |
N-MOSFET |
| Technology |
QFET® |
| Polarisation |
unipolar |
| Drain-source voltage |
600V |
| Drain current |
14.9A |
| Power dissipation |
310W |
| Case |
TO3PN |
| Gate-source voltage |
±30V |
| On-state resistance |
0.24Ω |
| Mounting |
THT |
| Gate charge |
145nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |