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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FQA140N10

FQA140N10 - THT N channel transistors

FQA140N10
Description

Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 99A
Pulsed drain current 560A
Power dissipation 375W
Case TO3PN
Gate-source voltage ±25V
On-state resistance 10mΩ
Mounting THT
Gate charge 285nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat