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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FQA13N80-F109

FQA13N80-F109 - THT N channel transistors

FQA13N80-F109
Description

Транзистор: N-MOSFET; польовий; 800В; 8А; Idm: 50,4А; 300Вт; TO3PN

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 800V
Drain current 8A
Pulsed drain current 50.4A
Power dissipation 300W
Case TO3PN
Gate-source voltage ±30V
On-state resistance 0.75Ω
Mounting THT
Gate charge 88nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat