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Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A
| Manufacturer |
IXYS |
| Type of transistor |
N-MOSFET x2 |
| Technology |
HiPerFET™ Trench |
| Polarisation |
unipolar |
| Drain-source voltage |
250V |
| Drain current |
30A |
| Pulsed drain current |
130A |
| Power dissipation |
125W |
| Case |
ISOPLUS i4-pac™ x024a |
| Gate-source voltage |
±30V |
| On-state resistance |
60mΩ |
| Mounting |
THT |
| Gate charge |
78nC |
| Kind of package |
tube |
| Kind of channel |
enhancement |
| Semiconductor structure |
double series |
| Reverse recovery time |
84ns |