FMM50-025TF - Multi channel transistors

FMM50-025TF
Description

Transistor: N-MOSFET x2; Trench; unipolar; 250V; 30A; Idm: 130A

Specifications
Manufacturer IXYS
Type of transistor N-MOSFET x2
Technology HiPerFET™
Trench
Polarisation unipolar
Drain-source voltage 250V
Drain current 30A
Pulsed drain current 130A
Power dissipation 125W
Case ISOPLUS i4-pac™ x024a
Gate-source voltage ±30V
On-state resistance 60mΩ
Mounting THT
Gate charge 78nC
Kind of package tube
Kind of channel enhancement
Semiconductor structure double series
Reverse recovery time 84ns
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Development and design: Seventh Cat