FGY75T120SQDN - THT IGBT transistors

FGY75T120SQDN
Description

Transistor: IGBT; 1.2kV; 75A; 395W; TO247-3

Specifications
Manufacturer ONSEMI
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 75A
Power dissipation 395W
Case TO247-3
Gate-emitter voltage ±20V
Pulsed collector current 300A
Mounting THT
Gate charge 399nC
Kind of package tube
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Development and design: Seventh Cat