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Home / Catalog / TME catalog / Semiconductors / Transistors / IGBT transistors and modules / IGBT transistors / THT IGBT transistors / FGY60T120SQDN

FGY60T120SQDN - THT IGBT transistors

FGY60T120SQDN
Description

Transistor: IGBT; 1.2kV; 60A; 259W; TO247-3

Specifications
Manufacturer ONSEMI
Type of transistor IGBT
Collector-emitter voltage 1.2kV
Collector current 60A
Power dissipation 259W
Case TO247-3
Gate-emitter voltage ±25V
Pulsed collector current 240A
Mounting THT
Gate charge 311nC
Kind of package tube
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Development and design: Seventh Cat