FGA40N65SMD - THT IGBT transistors

FGA40N65SMD
Description

Transistor: IGBT; 650V; 40A; 174W; TO3P

Specifications
Manufacturer ONSEMI
Type of transistor IGBT
Collector-emitter voltage 650V
Collector current 40A
Power dissipation 174W
Case TO3P
Gate-emitter voltage ±20V
Pulsed collector current 120A
Mounting THT
Gate charge 119nC
Kind of package tube
Features of semiconductor devices integrated anti-parallel diode
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Development and design: Seventh Cat