FDT458P - SMD P channel transistors

FDT458P
Description

Transistor: P-MOSFET; unipolar; -30V; -3.4A; 3W; SOT223

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -30V
Drain current -3.4A
Power dissipation 3W
Case SOT223
Gate-source voltage ±20V
On-state resistance 0.21Ω
Mounting SMD
Gate charge 3.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat