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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / FDS89161

FDS89161 - Multi channel transistors

FDS89161
Description

Transistor: N-MOSFET x2; unipolar; 100V; 2.7A; 31W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 100V
Drain current 2.7A
Power dissipation 31W
Case SO8
Gate-source voltage ±20V
On-state resistance 176mΩ
Mounting SMD
Gate charge 4.1nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat