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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FDS8896

FDS8896 - SMD N channel transistors

FDS8896
Description

Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 110A; 2.5W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 30V
Drain current 15A
Pulsed drain current 110A
Power dissipation 2.5W
Case SO8
Gate-source voltage ±20V
On-state resistance 6mΩ
Mounting SMD
Gate charge 67nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat