FDS6912A - Multi channel transistors

FDS6912A
Description

Transistor: N-MOSFET x2; unipolar; 30V; 6A; 1.6W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 30V
Drain current 6A
Power dissipation 1.6W
Case SO8
Gate-source voltage ±20V
On-state resistance 28mΩ
Mounting SMD
Gate charge 8.1nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat