FDS6898A - Multi channel transistors

FDS6898A
Description

Transistor: N-MOSFET x2; unipolar; 20V; 9.4A; 2W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 20V
Drain current 9.4A
Power dissipation 2W
Case SO8
Gate-source voltage ±12V
On-state resistance 21mΩ
Mounting SMD
Gate charge 23nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat