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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / FDS6673BZ

FDS6673BZ - SMD P channel transistors

FDS6673BZ
Description

Transistor: P-MOSFET; unipolar; -30V; -14.5A; 2.5W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -30V
Drain current -14.5A
Power dissipation 2.5W
Case SO8
Gate-source voltage ±25V
On-state resistance 12mΩ
Mounting SMD
Gate charge 65nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat