FDS5670 - SMD N channel transistors

FDS5670
Description

Transistor: N-MOSFET; unipolar; 60V; 10A; 2.5W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 60V
Drain current 10A
Power dissipation 2.5W
Case SO8
Gate-source voltage ±20V
On-state resistance 27mΩ
Mounting SMD
Gate charge 70nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat