FDS4685 - SMD P channel transistors

FDS4685
Description

Transistor: P-MOSFET; unipolar; -40V; -8.2A; 2.5W; SO8

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -40V
Drain current -8.2A
Power dissipation 2.5W
Case SO8
Gate-source voltage ±20V
On-state resistance 42mΩ
Mounting SMD
Gate charge 27nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat