FDPF2D3N10C - THT N channel transistors

FDPF2D3N10C
Description

Transistor: N-MOSFET; unipolar; 100V; 157A; Idm: 888A; 45W; TO220FP

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 100V
Drain current 157A
Pulsed drain current 888A
Power dissipation 45W
Case TO220FP
Gate-source voltage ±20V
On-state resistance 2.3mΩ
Mounting THT
Gate charge 152nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat