FDPC5030SG - Multi channel transistors

FDPC5030SG
Description

Transistor: N-MOSFET x2; unipolar; 30V; 56/84A; 23/25W; PQFN8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 30V
Drain current 56/84A
Power dissipation 23/25W
Case PQFN8
Gate-source voltage ±20/±12V
On-state resistance 5/2.4mΩ
Mounting SMD
Gate charge 17/39nC
Kind of package reel
tape
Kind of channel enhancement
Semiconductor structure asymmetric
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat