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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FDP61N20

FDP61N20 - THT N channel transistors

FDP61N20
Description

Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UniFET™
Polarisation unipolar
Drain-source voltage 200V
Drain current 38.5A
Power dissipation 417W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 41mΩ
Mounting THT
Gate charge 75nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat