FDP52N20 - THT N channel transistors

FDP52N20
Description

Transistor: N-MOSFET; unipolar; 200V; 33A; 357W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 200V
Drain current 33A
Power dissipation 357W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 49mΩ
Mounting THT
Gate charge 63nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat