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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FDP33N25

FDP33N25 - THT N channel transistors

FDP33N25
Description

Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 250V
Drain current 20.4A
Pulsed drain current 132A
Power dissipation 235W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 94mΩ
Mounting THT
Gate charge 48nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat