FDP2614 - THT N channel transistors

FDP2614
Description

Transistor: N-MOSFET; unipolar; 200V; 39.3A; 260W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 200V
Drain current 39.3A
Power dissipation 260W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 27mΩ
Mounting THT
Gate charge 99nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat