FDP2572 - THT N channel transistors

FDP2572
Description

Transistor: N-MOSFET; unipolar; 150V; 20A; 135W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 150V
Drain current 20A
Power dissipation 135W
Case TO220AB
Gate-source voltage ±20V
On-state resistance 146mΩ
Mounting THT
Gate charge 34nC
Kind of package tube
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat