FDP22N50N - THT N channel transistors

FDP22N50N
Description

Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UniFET™
Polarisation unipolar
Drain-source voltage 500V
Drain current 13.2A
Power dissipation 312.5W
Case TO220AB
Gate-source voltage ±30V
On-state resistance 0.22Ω
Mounting THT
Gate charge 65nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat