FDP20N50F - THT N channel transistors

FDP20N50F
Description

Transistor: N-MOSFET; unipolar; 500V; 12.9A; Idm: 80A; 250W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology DMOS
UniFET™
Polarisation unipolar
Drain-source voltage 500V
Drain current 12.9A
Pulsed drain current 80A
Power dissipation 250W
Case TO220-3
Gate-source voltage ±30V
On-state resistance 0.26Ω
Mounting THT
Gate charge 65nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat