FDP070AN06A0 - THT N channel transistors

FDP070AN06A0
Description

Transistor: N-MOSFET; unipolar; 60V; 80A; 175W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 60V
Drain current 80A
Power dissipation 175W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 7mΩ
Mounting THT
Gate charge 51nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat