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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / THT N channel transistors / FDP036N10A

FDP036N10A - THT N channel transistors

FDP036N10A
Description

Transistor: N-MOSFET; unipolar; 100V; 214A; Idm: 856A; 333W; TO220-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 214A
Pulsed drain current 856A
Power dissipation 333W
Case TO220-3
Gate-source voltage ±20V
On-state resistance 3.6mΩ
Mounting THT
Gate charge 89nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat