FDN537N - SMD N channel transistors

FDN537N
Description

Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 25A; 1.5W; SOT23

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 30V
Drain current 8A
Pulsed drain current 25A
Power dissipation 1.5W
Case SOT23
Gate-source voltage ±20V
On-state resistance 30mΩ
Mounting SMD
Gate charge 8.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat