FDN360P - SMD P channel transistors

FDN360P
Description

Transistor: P-MOSFET; unipolar; -30V; -2A; 0.5W; SuperSOT-3

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -30V
Drain current -2A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±20V
On-state resistance 136mΩ
Mounting SMD
Gate charge 9nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat