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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / N channel transistors / SMD N channel transistors / FDN359AN

FDN359AN - SMD N channel transistors

FDN359AN
Description

Transistor: N-MOSFET; unipolar; 30V; 2.7A; 0.5W; SuperSOT-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 30V
Drain current 2.7A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±20V
On-state resistance 75mΩ
Mounting SMD
Gate charge 7nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat