FDN340P - SMD P channel transistors

FDN340P
Description

Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -20V
Drain current -2A
Pulsed drain current -10A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±8V
On-state resistance 0.11Ω
Mounting SMD
Gate charge 10nC
Kind of package reel
tape
Kind of channel enhancement
Added to cart
View cart
© Radiotehnika 2025
Development and design: Seventh Cat