FDN339AN - SMD N channel transistors

FDN339AN
Description

Transistor: N-MOSFET; unipolar; 20V; 3A; 0.5W; SuperSOT-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 20V
Drain current 3A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±8V
On-state resistance 61mΩ
Mounting SMD
Gate charge 10nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat