FDN335N - SMD N channel transistors

FDN335N
Description

Transistor: N-MOSFET; unipolar; 20V; 1.7A; 500mW; SuperSOT-3

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 20V
Drain current 1.7A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±8V
On-state resistance 0.12Ω
Mounting SMD
Gate charge 5nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat