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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / P channel transistors / SMD P channel transistors / FDN306P

FDN306P - SMD P channel transistors

FDN306P
Description

Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -12V
Drain current -2.6A
Power dissipation 0.5W
Case SuperSOT-3
Gate-source voltage ±8V
On-state resistance 80mΩ
Mounting SMD
Gate charge 17nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat