FDMS86163P - SMD P channel transistors

FDMS86163P
Description

Transistor: P-MOSFET; unipolar; -100V; -50A; 104W; PQFN8

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -100V
Drain current -50A
Power dissipation 104W
Case PQFN8
Gate-source voltage ±25V
On-state resistance 36mΩ
Mounting SMD
Gate charge 59nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat