FDMS3660S - Multi channel transistors

FDMS3660S
Description

Transistor: N-MOSFET x2; unipolar; 30/30V; 30/60A; 2.2/2.5W; PQFN8

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Polarisation unipolar
Drain-source voltage 30/30V
Drain current 30/60A
Power dissipation 2.2/2.5W
Case PQFN8
Gate-source voltage ±20/±12V
On-state resistance 11/2.6mΩ
Mounting SMD
Gate charge 29/87nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat