FDL100N50F - THT N channel transistors

FDL100N50F
Description

Transistor: N-MOSFET; unipolar; 500V; 100A; 2500W; TO264

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology UniFET™
Polarisation unipolar
Drain-source voltage 500V
Drain current 100A
Power dissipation 2.5kW
Case TO264
Gate-source voltage ±30V
On-state resistance 55mΩ
Mounting THT
Gate charge 238nC
Kind of package tube
Kind of channel enhancement
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Development and design: Seventh Cat