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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / FDG6335N

FDG6335N - Multi channel transistors

FDG6335N
Description

Transistor: N-MOSFET x2; unipolar; 20V; 0.7A; 0.3W

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 20V
Drain current 0.7A
Power dissipation 0.3W
Case SC70-6
SC88
SOT363
Gate-source voltage ±12V
On-state resistance 442mΩ
Mounting SMD
Gate charge 1.4nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat