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Home / Catalog / TME catalog / Semiconductors / Transistors / Unipolar transistors / Multi channel transistors / FDG6304P

FDG6304P - Multi channel transistors

FDG6304P
Description

Transistor: P-MOSFET x2; unipolar; -25V; -0.41A; 0.3W

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET x2
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -25V
Drain current -0.41A
Power dissipation 0.3W
Case SC70-6
SC88
SOT363
Gate-source voltage ±8V
On-state resistance 1.9Ω
Mounting SMD
Gate charge 1.5nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat