FDG6303N - Multi channel transistors

FDG6303N
Description

Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET x2
Technology DMOS
Polarisation unipolar
Drain-source voltage 25V
Drain current 0.5A
Pulsed drain current 1.3A
Power dissipation 0.3W
Case SC70-6
SC88
SOT363
On-state resistance 770mΩ
Mounting SMD
Gate charge 2.3nC
Kind of package reel
tape
Kind of channel enhancement
Features of semiconductor devices logic level
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Development and design: Seventh Cat