FDD850N10L - SMD N channel transistors

FDD850N10L
Description

Transistor: N-MOSFET; unipolar; 100V; 11.1A; 50W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Polarisation unipolar
Drain-source voltage 100V
Drain current 11.1A
Power dissipation 50W
Case DPAK
Gate-source voltage ±20V
On-state resistance 75mΩ
Mounting SMD
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat