FDD3860 - SMD N channel transistors

FDD3860
Description

Transistor: N-MOSFET; unipolar; 100V; 6.2A; Idm: 60A; 83W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor N-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage 100V
Drain current 6.2A
Pulsed drain current 60A
Power dissipation 83W
Case DPAK
Gate-source voltage ±20V
On-state resistance 64mΩ
Mounting SMD
Gate charge 31nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat