FDD306P - SMD P channel transistors

FDD306P
Description

Transistor: P-MOSFET; unipolar; -12V; -6.7A; 52W; DPAK

Specifications
Manufacturer ONSEMI
Type of transistor P-MOSFET
Technology PowerTrench®
Polarisation unipolar
Drain-source voltage -12V
Drain current -6.7A
Power dissipation 52W
Case DPAK
Gate-source voltage ±8V
On-state resistance 90mΩ
Mounting SMD
Gate charge 21nC
Kind of package reel
tape
Kind of channel enhancement
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Development and design: Seventh Cat